Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111).
Identifieur interne : 000440 ( Main/Exploration ); précédent : 000439; suivant : 000441Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111).
Auteurs : RBID : pubmed:23299780English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Gallium, Indium, Macromolecular Substances, Silicon.
- chemistry : Nanotubes.
- methods : Crystallization.
- ultrastructure : Nanotubes.
- Materials Testing, Molecular Conformation, Particle Size, Surface Properties.
Abstract
We have performed room-temperature time-resolved photoluminescence measurements on samples that comprise InGaN insertions embedded in GaN nanowires. The decay curves reveal non-exponential recombination dynamics that evolve into a power law at long times. We find that the characteristic power-law exponent increases with emission photon energy. The data are analyzed in terms of a model that involves an interplay between a radiative state and a metastable charge-separated state. The agreement between our results and the model points towards an emission dominated by carriers localized on In-rich nanoclusters that form spontaneously inside the InGaN insertions.
DOI: 10.1088/0957-4484/24/4/045702
PubMed: 23299780
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111).</title><author><name sortKey="Cardin, V" uniqKey="Cardin V">V Cardin</name><affiliation wicri:level="1"><nlm:affiliation>Département de Physique and Regroupement Québécois sur Matériaux de Pointe, Université de Montréal, Case Postale 6128, Succursale Centre-ville, Montréal, QC, H3C 3J7, Canada.</nlm:affiliation><country xml:lang="fr">Canada</country><wicri:regionArea>Département de Physique and Regroupement Québécois sur Matériaux de Pointe, Université de Montréal, Case Postale 6128, Succursale Centre-ville, Montréal, QC, H3C 3J7</wicri:regionArea></affiliation></author><author><name sortKey="Dion Bertrand, L I" uniqKey="Dion Bertrand L">L I Dion-Bertrand</name></author><author><name sortKey="Gregoire, P" uniqKey="Gregoire P">P Grégoire</name></author><author><name sortKey="Nguyen, H P T" uniqKey="Nguyen H">H P T Nguyen</name></author><author><name sortKey="Sakowicz, M" uniqKey="Sakowicz M">M Sakowicz</name></author><author><name sortKey="Mi, Z" uniqKey="Mi Z">Z Mi</name></author><author><name sortKey="Silva, C" uniqKey="Silva C">C Silva</name></author><author><name sortKey="Leonelli, R" uniqKey="Leonelli R">R Leonelli</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="doi">10.1088/0957-4484/24/4/045702</idno><idno type="RBID">pubmed:23299780</idno><idno type="pmid">23299780</idno><idno type="wicri:Area/Main/Corpus">000859</idno><idno type="wicri:Area/Main/Curation">000859</idno><idno type="wicri:Area/Main/Exploration">000440</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystallization (methods)</term><term>Gallium (chemistry)</term><term>Indium (chemistry)</term><term>Macromolecular Substances (chemistry)</term><term>Materials Testing</term><term>Molecular Conformation</term><term>Nanotubes (chemistry)</term><term>Nanotubes (ultrastructure)</term><term>Particle Size</term><term>Silicon (chemistry)</term><term>Surface Properties</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Gallium</term><term>Indium</term><term>Macromolecular Substances</term><term>Silicon</term></keywords><keywords scheme="MESH" qualifier="chemistry" xml:lang="en"><term>Nanotubes</term></keywords><keywords scheme="MESH" qualifier="methods" xml:lang="en"><term>Crystallization</term></keywords><keywords scheme="MESH" qualifier="ultrastructure" xml:lang="en"><term>Nanotubes</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Materials Testing</term><term>Molecular Conformation</term><term>Particle Size</term><term>Surface Properties</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have performed room-temperature time-resolved photoluminescence measurements on samples that comprise InGaN insertions embedded in GaN nanowires. The decay curves reveal non-exponential recombination dynamics that evolve into a power law at long times. We find that the characteristic power-law exponent increases with emission photon energy. The data are analyzed in terms of a model that involves an interplay between a radiative state and a metastable charge-separated state. The agreement between our results and the model points towards an emission dominated by carriers localized on In-rich nanoclusters that form spontaneously inside the InGaN insertions.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">23299780</PMID><DateCreated><Year>2013</Year><Month>01</Month><Day>10</Day></DateCreated><DateCompleted><Year>2013</Year><Month>06</Month><Day>10</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-6528</ISSN><JournalIssue CitedMedium="Internet"><Volume>24</Volume><Issue>4</Issue><PubDate><Year>2013</Year><Month>Feb</Month><Day>1</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111).</ArticleTitle><Pagination><MedlinePgn>045702</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/24/4/045702</ELocationID><Abstract><AbstractText>We have performed room-temperature time-resolved photoluminescence measurements on samples that comprise InGaN insertions embedded in GaN nanowires. The decay curves reveal non-exponential recombination dynamics that evolve into a power law at long times. We find that the characteristic power-law exponent increases with emission photon energy. The data are analyzed in terms of a model that involves an interplay between a radiative state and a metastable charge-separated state. The agreement between our results and the model points towards an emission dominated by carriers localized on In-rich nanoclusters that form spontaneously inside the InGaN insertions.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Cardin</LastName><ForeName>V</ForeName><Initials>V</Initials><Affiliation>Département de Physique and Regroupement Québécois sur Matériaux de Pointe, Université de Montréal, Case Postale 6128, Succursale Centre-ville, Montréal, QC, H3C 3J7, Canada.</Affiliation></Author><Author ValidYN="Y"><LastName>Dion-Bertrand</LastName><ForeName>L I</ForeName><Initials>LI</Initials></Author><Author ValidYN="Y"><LastName>Grégoire</LastName><ForeName>P</ForeName><Initials>P</Initials></Author><Author ValidYN="Y"><LastName>Nguyen</LastName><ForeName>H P T</ForeName><Initials>HP</Initials></Author><Author ValidYN="Y"><LastName>Sakowicz</LastName><ForeName>M</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Mi</LastName><ForeName>Z</ForeName><Initials>Z</Initials></Author><Author ValidYN="Y"><LastName>Silva</LastName><ForeName>C</ForeName><Initials>C</Initials></Author><Author ValidYN="Y"><LastName>Leonelli</LastName><ForeName>R</ForeName><Initials>R</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2013</Year><Month>01</Month><Day>08</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanotechnology</MedlineTA><NlmUniqueID>101241272</NlmUniqueID><ISSNLinking>0957-4484</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Macromolecular Substances</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>gallium nitride</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>indium nitride</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>CH46OC8YV4</RegistryNumber><NameOfSubstance>Gallium</NameOfSubstance></Chemical><Chemical><RegistryNumber>Z4152N8IUI</RegistryNumber><NameOfSubstance>Silicon</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Crystallization</DescriptorName><QualifierName MajorTopicYN="Y">methods</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Gallium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Macromolecular Substances</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Materials Testing</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Molecular Conformation</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Nanotubes</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="Y">ultrastructure</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Particle Size</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Silicon</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Surface Properties</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2013</Year><Month>1</Month><Day>08</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>1</Month><Day>10</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>1</Month><Day>10</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>6</Month><Day>12</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1088/0957-4484/24/4/045702</ArticleId><ArticleId IdType="pubmed">23299780</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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